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IKW75N65ET7XKSA1

Name: Infineon IKW75N65ET7XKSA1
Brand: Infineon Technologies
SKU: 726-IKW75N65ET7XKSA1
Price: 5.38 EUR
Availability: OutOfStock

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Mouser No:

726-IKW75N65ET7XKSA1

Mfr. No:

IKW75N65ET7XKSA1

Mfr.:

Infineon Technologies

Description:

IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247 package

Datasheet:

IKW75N65ET7XKSA1 Datasheet (PDF)

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Factory Lead Time:: 4 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,38 €	5,38 €
	3,22 €	32,20 €
	2,68 €	268,00 €
	2,58 €	1 238,40 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.35 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	80 A
Pd - Power Dissipation:	333 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	IGBT7 T7
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	IKW75N65ET7 SP005348294

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Datasheet

IKW75N65ET7XKSA1 Datasheet (PDF)

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Infineon's Latest Power and Sensing Guide (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Low Loss Duopack IGBTs

Infineon Technologies Low Loss Duopack IGBTs offer a robust humidity design with Trenchstop™ and Fieldstop™ technology. They feature a very soft, fast-recovery anti-parallel diode, short tail current, and very low V_CEsat.

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.