Compare similar product

Comparison of similar products

Product Info:

Current product First  Similar product
Image: Product 747-IXFK26N90 Product 747-IXFH24N90P
Mouser Part No: 747-IXFK26N90 747-IXFH24N90P
Mfr.'s Part No: IXFK26N90 IXFH24N90P
Manufacturer: IXYS IXYS
Description: MOSFETs 26 Amps 900V 0.3 Rds MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds
Lifecycle: Not Recommended for New Designs -
Datasheet: IXFK26N90 Datasheet IXFH24N90P Datasheet
RoHS:    

Specifications

Brand: IXYS IXYS
Channel Mode: Enhancement Enhancement
Configuration: Single Single
Country of Assembly: Not Available Not Available
Country of Diffusion: Not Available Not Available
Country of Origin: PH KR
Fall Time: 24 ns 38 ns
Id - Continuous Drain Current: 26 A 24 A
Maximum Operating Temperature: + 150 C + 150 C
Minimum Operating Temperature: - 55 C - 55 C
Mounting Style: Through Hole Through Hole
Number of Channels: 1 Channel 1 Channel
Package/Case: TO-264-3 TO-247-3
Packaging: Tube Tube
Pd - Power Dissipation: 560 W 660 W
Product Type: MOSFETs MOSFETs
Rds On - Drain-Source Resistance: 300 mOhms 420 mOhms
Rise Time: 35 ns 40 ns
Series: HiPerFET IXFH24N90
Standard Pack Qty: 300 30
Subcategory: Transistors Transistors
Technology: Si Si
Tradename: HyperFET HiPerFET
Transistor Polarity: N-Channel N-Channel
Transistor Type: 1 N-Channel 1 N-Channel
Typical Turn-Off Delay Time: 130 ns 68 ns
Typical Turn-On Delay Time: 60 ns 46 ns
Vds - Drain-Source Breakdown Voltage: 900 V 900 V
Vgs - Gate-Source Voltage: - 20 V, 20 V - 30 V, 30 V
Forward Transconductance - Min: - 16 S
Qg - Gate Charge: - 130 nC
Vgs th - Gate-Source Threshold Voltage: - 6.5 V

Ordering Information

Stock: Non-Stocked 261 Can Dispatch Immediately
Factory Lead Time: Request Delivery Quote 27 Weeks Estimated factory production time for quantities greater than shown.
Buy:
-,-- €
-,-- €
This Product Ships FREE
-,-- €
-,-- €
Pricing:
Qty. Unit Price
Ext. Price
12,19 € 3 657,00 €
12,18 € 7 308,00 €
Qty. Unit Price
Ext. Price
14,51 € 14,51 €
9,44 € 94,40 €