AIMDQ75R020M2HXTMA1

Infineon Technologies
726-AIMDQ75R020M2HXT
AIMDQ75R020M2HXTMA1

Mfr.:

Description:
SiC MOSFETs CoolSiC Automotive Power Device 750 V G2

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 35

Stock:
35 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
13,79 € 13,79 €
11,23 € 112,30 €
9,37 € 937,00 €
8,36 € 4 180,00 €
Full Reel (Order in multiples of 750)
7,85 € 5 887,50 €
2 250 Quote

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
PG-HDSOP-22
N-Channel
1 Channel
750 V
86 A
25 mOhms
-7 V to + 23 V
4.5 V
59 nC
- 55 C
+ 175 C
340 W
Enhancement
CoolSiC
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: AT
Fall Time: 7 ns
Forward Transconductance - Min: 27 S
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Product: SiC MOSFET
Product Type: SiC MOSFETS
Rise Time: 10 ns
Factory Pack Quantity: 750
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: Automotive Power Device
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 11 ns
Part # Aliases: AIMDQ75R020M2H SP006089223
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Attributes selected: 0

ECCN:
EAR99

CoolSiC™ Automotive 750V G2 MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of RDS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.