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MSCSM120HM063CAG

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Mouser No:

579-MSCSM120HM063CAG

Mfr. No:

MSCSM120HM063CAG

Mfr.:

Microchip Technology

Description:

Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C

Datasheet:

MSCSM120HM063CAG Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	Discrete Semiconductor Modules
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Product:	MOSFET-SiC SBD Modules
Type:	Full Bridge
Technology:	SiC
Vf - Forward Voltage:	1.5 V
Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Mounting Style:	Screw Mount
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Brand:	Microchip Technology
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Product Type:	Discrete Semiconductor Modules
Factory Pack Quantity:	1
Subcategory:	Discrete Semiconductor Modules

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Datasheet

MSCSM120HM063CAG Datasheet (PDF)

PCN

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CNHTS:: 8504409100
USHTS:: 8541290065
ECCN:: EAR99

AgileSwitch® Phase Leg SiC MOSFET Power Modules

Microsemi / Microchip AgileSwitch® Phase Leg SiC (Silicon Carbide) MOSFET Power Modules are built with SiC MOSFETs and SiC Diodes and combine the advantages of both devices. These power modules feature an extremely low inductance SP6LI package with a maximum stray inductance of 3nH. These SP6LI power modules are offered in 1200V and 1700V variants with a case temperature (T_c) of +80°C. Offering higher power density and a compact form factor, the SP6LI package enables a lower quantity of modules in parallel to achieve complete systems, helping designers to downsize their equipment further.