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SCT1000N170

Name: STMicroelectronics SCT1000N170
Brand: STMicroelectronics
SKU: 511-SCT1000N170
Price: 7.64 EUR
Availability: InStock

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Mouser No:

511-SCT1000N170

Mfr. No:

SCT1000N170

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package

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Datasheet:

SCT1000N170 Datasheet (PDF)

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In Stock: 564

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Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	7,64 €	7,64 €
	5,23 €	52,30 €
	3,87 €	387,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	HiP-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	1 Ohms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Qg - Gate Charge:	14 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	120 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	IT
Country of Diffusion:	Not Available
Country of Origin:	IT
Packaging:	Tube
Product Type:	SiC MOSFETS
Series:	SCT1000N170
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel

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Datasheet

SCT1000N170 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.