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STD10N60DM2

Name: STMicroelectronics STD10N60DM2
Brand: STMicroelectronics
SKU: 511-STD10N60DM2
Price: 1.69 EUR
Availability: InStock

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Mouser No:

511-STD10N60DM2

Mfr. No:

STD10N60DM2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package

Complete Your Design

Datasheet:

STD10N60DM2 Datasheet (PDF)

ECAD Model:

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In Stock: 2 122

Stock:: 2 122 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,69 €	1,69 €
	1,08 €	10,80 €
	0,726 €	72,60 €
	0,576 €	288,00 €
	0,529 €	529,00 €
Full Reel (Order in multiples of 2500)
	0,503 €	1 257,50 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	8 A
Rds On - Drain-Source Resistance:	440 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	15 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	109 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	11.5 ns
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	STD10N60DM2
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	11 ns
Unit Weight:	330 mg

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Datasheet

STD10N60DM2 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q_rr, t_rr) and shows 20% lower R_DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.