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STP45N40DM2AG

Name: STMicroelectronics STP45N40DM2AG
Brand: STMicroelectronics
SKU: 511-STP45N40DM2AG
Price: 6.54 EUR
Availability: InStock

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Mouser No:

511-STP45N40DM2AG

Mfr. No:

STP45N40DM2AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 400 V, 0.063 Ohm typ., 38 A MDmesh DM2 Power MOSFET i

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Datasheet:

STP45N40DM2AG Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STP45N40DM2AG

In Stock: 4 720

Stock:: 4 720

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On Order:: 1 000
Factory Lead Time:: 18

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,54 €	6,54 €
	3,56 €	35,60 €
	3,27 €	327,00 €
	3,18 €	1 590,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	400 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	72 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	SG
Fall Time:	9.8 ns
Product Type:	MOSFETs
Rise Time:	6.7 ns
Series:	STP45N40DM2AG
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	68 ns
Typical Turn-On Delay Time:	20 ns
Unit Weight:	2 g

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Datasheet

STP45N40DM2AG Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Automotive-Grade N-Channel MDmesh DM2 MOSFETs

STMicroelectronics Automotive-Grade N-Channel MDmesh DM2 Power MOSFETs are high-voltage with very low recovery charge (Qrr) and time (trr) combined with low R_DS(on). They are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.