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CSD17581Q3A

Name: Texas Instruments CSD17581Q3A
Brand: Texas Instruments
SKU: 595-CSD17581Q3A
Price: 0.93 EUR
Availability: InStock

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Mouser No:

595-CSD17581Q3A

Mfr. No:

CSD17581Q3A

Mfr.:

Texas Instruments

Description:

MOSFETs 30-V N channel NexF ET power MOSFET si A A 595-CSD17581Q3AT

Datasheet:

CSD17581Q3A Datasheet

ECAD Model:

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More Information

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In Stock: 3 617

Stock:: 3 617

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On Order:: 2 500
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1 Maximum: 290

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,937 €	0,94 €
	0,589 €	5,89 €
	0,386 €	38,60 €
Full Reel (Order in multiples of 2500)
	0,386 €	965,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD17581Q3AT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

1,46 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD17581Q3AT

Description:

MOSFETs 30V N-Channel NexFET A 595-CSD17581Q3A A A 595-CSD17581Q3A

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSONP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	3.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	54 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	63 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	CN
Country of Origin:	CN
Fall Time:	10 ns
Forward Transconductance - Min:	78 S
Product Type:	MOSFETs
Rise Time:	23 ns
Series:	CSD17581Q3A
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	23 ns
Typical Turn-On Delay Time:	12 ns
Unit Weight:	27,700 mg

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

CSD17581Q3A NexFET™ Power MOSFET

Texas Instruments CSD17581Q3A NexFET™ Power MOSFET is an N-Channel 30V, 3.2mΩ power MOSFET. This device is designed to minimise losses in power conversion applications. This MOSFET offers low Qg, Qgd, R_DS(on) and low thermal resistance. These features make this device ideal for point-of-load synchronous buck converter applications in networking, telecoms, and computing systems. This device also works well for motor control applications and is optimised for control FET applications.
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