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CSD87313DMST

Name: Texas Instruments CSD87313DMST
Brand: Texas Instruments
SKU: 595-CSD87313DMST
Price: 2.64 EUR
Availability: InStock

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Mouser No:

595-CSD87313DMST

Mfr. No:

CSD87313DMST

Mfr.:

Texas Instruments

Description:

MOSFETs 30-V N channel NexF ET power MOSFET du A A 595-CSD87313DMS

Datasheet:

CSD87313DMST Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD87313DMST

In Stock: 892

Stock:: 892

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On Order:: 472
Factory Lead Time:: 6

Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,64 €	2,64 €
	1,71 €	17,10 €
	0,98 €	98,00 €
Full Reel (Order in multiples of 250)
	0,98 €	245,00 €
	0,929 €	464,50 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD87313DMS

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

1,84 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD87313DMS

Description:

MOSFETs 30-V N channel NexF ET power MOSFET du A A 595-CSD87313DMST

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WSON-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	5.5 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	600 mV
Qg - Gate Charge:	28 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.7 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Dual
Country of Assembly:	PH
Country of Diffusion:	CN
Country of Origin:	PH
Fall Time:	13 ns, 13 ns
Forward Transconductance - Min:	149 S, 149 S
Product Type:	MOSFETs
Rise Time:	27 ns, 27 ns
Series:	CSD87313DMS
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	41 ns, 41 ns
Typical Turn-On Delay Time:	9 ns, 9 ns
Unit Weight:	5,500 mg

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Datasheet

CSD87313DMST Datasheet

SPICE Models

CSD87313DMS PSpice Model (Rev. A)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.