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LMG3526R050RQST

Name: Texas Instruments LMG3526R050RQST
Brand: Texas Instruments
SKU: 595-LMG3526R050RQST
Price: 21.6 EUR
Availability: InStock

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Mouser No:

595-LMG3526R050RQST

Mfr. No:

LMG3526R050RQST

Mfr.:

Texas Instruments

Description:

Gate Drivers 650-V 50-mâ„¦ GaN FE T With Integrated D

Datasheet:

LMG3526R050RQST Datasheet

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In Stock: 250

Stock:: 250 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	21,60 €	21,60 €
	16,90 €	169,00 €
	16,14 €	403,50 €
	14,43 €	1 443,00 €
Full Reel (Order in multiples of 250)
	12,22 €	3 055,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
REACH - SVHC:
Product:	GaN FET
Mounting Style:	SMD/SMT
Package/Case:	VQFN-52
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG3526R050
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Input Voltage - Max:	18 V
Input Voltage - Min:	7.5 V
Moisture Sensitive:	Yes
Product Type:	Gate Drivers
Factory Pack Quantity:	250
Subcategory:	PMIC - Power Management ICs

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Datasheet

LMG3526R050RQST Datasheet

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USHTS:: 8542390090
ECCN:: EAR99

LMG3526R050 650V GaN FET

Texas Instrument LMG3526R050 650V GaN FET with integrated driver and protection targets switch-mode power converters and enables designers to achieve new power density and efficiency levels. The LMG3526R050 integrates a silicon driver that enables switching speeds up to 150V/ns. TI offers integrated precision gate bias, resulting in higher switching SOA than discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers minimal ringing and clean switching in hard-switching power supply topologies. The adjustable gate drive strength allows control of the slew rate from 15V/ns to 150V/ns. This control can be used to control EMI and actively optimize switching performance.