It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

DMT10H072LFDFQ-7

Name: Diodes Incorporated DMT10H072LFDFQ-7
Brand: Diodes Incorporated
SKU: 621-DMT10H072LFDFQ-7
Price: 0.81 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

621-DMT10H072LFDFQ-7

Mfr. No:

DMT10H072LFDFQ-7

Mfr.:

Diodes Incorporated

Description:

MOSFETs MOSFET BVDSS: 61V 100V U-DFN2020-6 T&R 3K

Datasheet:

DMT10H072LFDFQ-7 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Diodes Incorporated DMT10H072LFDFQ-7

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,817 €	0,82 €
	0,523 €	5,23 €
	0,347 €	34,70 €
	0,263 €	131,50 €
	0,232 €	232,00 €
Full Reel (Order in multiples of 3000)
	0,165 €	495,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	U-DFN2020-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	62 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	2.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.8 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	4.3 ns
Product Type:	MOSFETs
Rise Time:	3.1 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	12.3 ns
Typical Turn-On Delay Time:	3 ns
Unit Weight:	65 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

DMT10H072LFDFQ-7 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Automotive MOSFETs

Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate the product is Automotive grade. This means the Diodes Incorporated device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the Production Part Approval Process (PPAP) and TS16949-approved manufacturing sites.