+358 (0) 800119414

Part of the TTI Family of Specialists Contact Mouser (Lithuania) +358 (0) 800119414 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

DMWSH120H90SM4Q

Images are for reference only
See Product Specifications

Mouser No:

621-DMWSH120H90SM4Q

Mfr. No:

DMWSH120H90SM4Q

Mfr.:

Diodes Incorporated

Description:

SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS

Datasheet:

DMWSH120H90SM4Q Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Diodes Incorporated DMWSH120H90SM4Q

Delivery Restriction:

Mouser does not presently sell this product in your region.

Availability

Stock:: An unexpected error occurred. Please try again later.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	SiC MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	97.5 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 15 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	51.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	235 W
Channel Mode:	Enhancement
Brand:	Diodes Incorporated
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	6.4 ns
Forward Transconductance - Min:	4.7 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	21.3 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	17.4 ns
Typical Turn-On Delay Time:	9.1 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

DMWSH120H90SM4Q Datasheet (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

DMWSH120Hx 1200V N-Channel Power MOSFETs

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs are silicon carbide MOSFETs designed to minimize the on-state resistance and maintain excellent switching performance. These MOSFETs feature low input capacitance, up to 100μA zero gate voltage drain current, up to ±250nA gate-source leakage, and a high BV_DSS rating for power applications. The DMWSH120Hx MOSFETs operate within the -55°C to 175°C temperature range and comply with the UL 94V-0 flammability classification rating. These power MOSFETs are ideal for EV high-power DC-DC converters, EV charging systems, solar inverters, AC-DC traction inverters, and automotive motor drivers.