FM24V10-GTR

Infineon Technologies
877-FM24V10-GTR
FM24V10-GTR

Mfr.:

Description:
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM

Datasheet:
ECAD Model:
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More Information
Learn more about Infineon Technologies FM24V10-GTR

In Stock: 2 694

Stock:
2 694 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
16,88 € 16,88 €
15,66 € 156,60 €
15,17 € 379,25 €
14,80 € 740,00 €
14,43 € 1 443,00 €
13,96 € 3 490,00 €
13,60 € 6 800,00 €
13,50 € 13 500,00 €
Full Reel (Order in multiples of 2500)
12,77 € 31 925,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
FM24V10-G
Packaging:
Tube
Availability:
In Stock
Price:
16,04 €
Min:
1

Similar Product

Infineon Technologies FM24V10-G
Infineon Technologies
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
1 Mbit
I2C
3.4 MHz
128 k x 8
SOIC-8
2 V
3.6 V
- 40 C
+ 85 C
FM24V10-G
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 2 V to 3.6 V
Product Type: FRAM
Factory Pack Quantity: 2500
Subcategory: Memory & Data Storage
Unit Weight: 774,450 mg
Products found:
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Attributes selected: 0

Datasheet

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TARIC:
8542329000
CNHTS:
8542329090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
EAR99

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.

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