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IPA95R310PFD7XKSA1

Name: Infineon IPA95R310PFD7XKSA1
Brand: Infineon Technologies
SKU: 726-IPA95R310PFD7XKS
Price: 3.2 EUR
Availability: InStock

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Mouser No:

726-IPA95R310PFD7XKS

Mfr. No:

IPA95R310PFD7XKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs LOW POWER_NEW

Datasheet:

IPA95R310PFD7XKSA1 Datasheet (PDF)

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In Stock: 469

Stock:: 469 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,20 €	3,20 €
	2,08 €	20,80 €
	1,59 €	159,00 €
	1,33 €	665,00 €
	1,24 €	1 240,00 €
	1,16 €	2 900,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220FP-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	950 V
Id - Continuous Drain Current:	8.7 A
Rds On - Drain-Source Resistance:	310 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	61 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 155 C
Pd - Power Dissipation:	31 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	10 ns
Factory Pack Quantity:	500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	61 ns
Typical Turn-On Delay Time:	13 ns
Part # Aliases:	IPA95R310PFD7 SP005547007

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Datasheet

IPA95R310PFD7XKSA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

950V CoolMOS™ PFD7 SJ MOSFETs

Infineon Technologies 950V CoolMOS™ PFD7 SJ MOSFETs offer super junction (SJ) technologies. The SJ technology is ideal for lighting and industrial SMPS applications by incorporating best-in-class performance with state-of-the-art ease of use. The PFDJ provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge (Qrr).