KTDM4G4B826BGCEAT

SMARTsemi
473-M4G4B826BGCEAT
KTDM4G4B826BGCEAT

Mfr.:

Description:
DRAM DRAM DDR4 4GB 512MX8 2666Mbps 1.2V 78-FBGA Commercial

Datasheet:
ECAD Model:
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More Information
Learn more about SMARTsemi KTDM4G4B826BGCEAT

In Stock: 198

Stock:
198 Can Dispatch Immediately
Quantities greater than 198 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
9,41 € 9,41 €
9,09 € 90,90 €
7,80 € 1 638,00 €
7,60 € 3 192,00 €
7,40 € 7 770,00 €
2 520 Quote

Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR4
4 Gbit
8 bit
1.333 GHz
FBGA-78
512 M x 8
1.14 V
1.26 V
0 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 210
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR4 Memory ICs

SMARTsemi DDR4 Memory ICs feature a power supply (JEDEC standard 1.2V) of VDD = 1.2V ± 5%, and VPP = 2.375V to 2.75V. The ICs have up to 8 banks (4 banks x 2 bank groups) for x 16 products. The DDR4 feature a Pseudo Open Drain (POD) interface with a Burst Length (BL) of 8 and 4 with Burst Chop (BC).

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