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MR20H40CDF

Name: Everspin Technologies MR20H40CDF
Brand: Everspin Technologies
SKU: 936-MR20H40CDF
Price: 25.9 EUR
Availability: InStock

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Mouser No:

936-MR20H40CDF

Mfr. No:

MR20H40CDF

Mfr.:

Everspin Technologies

Description:

MRAM 4Mb 3.3V 50Mhz 512K x 8 SPI

Datasheet:

MR20H40CDF Datasheet (PDF)

ECAD Model:

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Learn more about Everspin Technologies MR20H40CDF

In Stock: 1 141

Stock:: 1 141 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	25,90 €	25,90 €
	23,99 €	239,90 €
	23,22 €	580,50 €
	22,65 €	1 132,50 €
	22,08 €	2 208,00 €
	21,35 €	5 337,50 €
	20,91 €	11 918,70 €
1 140	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Everspin Technologies
Product Category:	MRAM
RoHS:
Package/Case:	DFN-8
Interface Type:	SPI
Memory Size:	4 Mbit
Organisation:	512 k x 8
Data Bus Width:	8 bit
Access Time:	20 ns
Supply Voltage - Min:	3 V
Supply Voltage - Max:	3.6 V
Operating Supply Current:	13.8 mA, 33 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	MR20H40
Packaging:	Tray
Brand:	Everspin Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	600 mW
Product Type:	MRAM
Factory Pack Quantity:	570
Subcategory:	Memory & Data Storage
Tradename:	Serial I/O (SPI)
Unit Weight:	37,400 mg

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Datasheet

MR20H40CDF Datasheet (PDF)

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CNHTS:: 8542329090
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 854232031
KRHTS:: 8542321040
MXHTS:: 8542320299
ECCN:: EAR99

MR2A08A & MR2A16A 4Mb Parallel MRAM

Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.