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MR2A08AMYS35

Name: Everspin Technologies MR2A08AMYS35
Brand: Everspin Technologies
SKU: 936-MR2A08AMYS35
Price: 47.25 EUR
Availability: InStock

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Mouser No:

936-MR2A08AMYS35

Mfr. No:

MR2A08AMYS35

Mfr.:

Everspin Technologies

Description:

MRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM

Datasheet:

MR2A08AMYS35 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Everspin Technologies MR2A08AMYS35

In Stock: 316

Stock:: 316 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	47,25 €	47,25 €
	43,61 €	436,10 €
	42,20 €	1 055,00 €
	41,15 €	2 057,50 €
	33,71 €	3 371,00 €
	33,70 €	9 099,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Everspin Technologies
Product Category:	MRAM
RoHS:
Package/Case:	TSOP-II-44
Interface Type:	Parallel
Memory Size:	4 Mbit
Organisation:	512 k x 8
Data Bus Width:	8 bit
Access Time:	35 ns
Supply Voltage - Min:	3 V
Supply Voltage - Max:	3.6 V
Operating Supply Current:	30 mA, 90 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	MR2A08A
Packaging:	Tray
Brand:	Everspin Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	600 mW
Product Type:	MRAM
Factory Pack Quantity:	135
Subcategory:	Memory & Data Storage
Tradename:	Parallel I/O (x8)

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Datasheet

MR2A08AMYS35 Datasheet (PDF)

PCN

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CNHTS:: 8542329010
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320312
KRHTS:: 8542321040
MXHTS:: 8542320299
ECCN:: EAR99

MR2A08A & MR2A16A 4Mb Parallel MRAM

Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.