+358 (0) 800119414

Part of the TTI Family of Specialists Contact Mouser (Lithuania) +358 (0) 800119414 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

PJP125N06SA-AU_T0_006A1

Name: Panjit PJP125N06SA-AU_T0_006A1
Brand: Panjit
SKU: 241-PJP125N06SAAU6A1
Price: 2.31 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

241-PJP125N06SAAU6A1

Mfr. No:

PJP125N06SA-AU_T0_006A1

Mfr.:

Panjit

Description:

MOSFETs 60V N-Channel Enhancement Mode MOSFET, 60 V, 215 A

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

PJP125N06SA-AU_T0_006A1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Panjit PJP125N06SA-AU_T0_006A1

In Stock: 1 980

Stock:: 1 980 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,31 €	2,31 €
	1,14 €	11,40 €
	1,02 €	102,00 €
	0,824 €	412,00 €
	0,774 €	774,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	215 A
Rds On - Drain-Source Resistance:	2.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	82 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	214 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	Panjit
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	37 ns
Product Type:	MOSFETs
Rise Time:	26 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	66 ns
Typical Turn-On Delay Time:	13 ns
Unit Weight:	2,095 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

PJP125N06SA-AU_T0_006A1 Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

60V N-Channel Enhancement Mode MOSFETs

PANJIT 60V N-Channel Enhancement Mode MOSFETs offer low reverse transfer capacitance in an AEC-Q101-qualified DFN5060-8L package. Operating within a -55°C to +150°C junction temperature range, these MOSFETs provide a maximum power dissipation range from 20W to 50W and single pulse avalanche ratings (28A current, 39mJ energy). Applications include automotive LED lighting, wireless chargers, and DC/DC converters.