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SQJ464EP-T1_GE3

Name: Vishay SQJ464EP-T1_GE3
Brand: Vishay / Siliconix
SKU: 78-SQJ464EP-T1_GE3
Price: 1.32 EUR
Availability: InStock

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Mouser No:

78-SQJ464EP-T1_GE3

Mfr. No:

SQJ464EP-T1_GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-Chnl 60-V (D-S) AEC-Q101 Qualified

Datasheet:

SQJ464EP-T1_GE3 Datasheet

ECAD Model:

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Learn more about Vishay / Siliconix SQJ464EP-T1_GE3

In Stock: 76 570

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,32 €	1,32 €
	0,832 €	8,32 €
	0,555 €	55,50 €
	0,436 €	218,00 €
	0,397 €	397,00 €
Full Reel (Order in multiples of 3000)
	0,357 €	1 071,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

SQJ464EP-T1_BE3

Packaging:

Availability:

In Stock

Price:

1,32 €

Min:

Similar Product

Mfr.:

Vishay Semiconductors

Mfr. No:

SQJ464EP-T1_BE3

Description:

MOSFETs PowerPAK SO-8L

Lifecycle:

New Product: New from this manufacturer.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-SO-8-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	32 A
Rds On - Drain-Source Resistance:	14 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	44 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	45 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	8.8 ns
Forward Transconductance - Min:	60 S
Product Type:	MOSFETs
Rise Time:	8.9 ns
Series:	SQJ
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25.4 ns
Typical Turn-On Delay Time:	7.7 ns
Unit Weight:	506,600 mg

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Datasheet

SQJ464EP-T1_GE3 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

SQJ Automotive MOSFETs

Vishay / Siliconix SQJ Automotive MOSFETs are TrenchFET^®Gen IV N-Channel 40V_DS power MOSFETs. These AEC-Q101 qualified MOSFETs are 100% R_g and Unclamped Inductive Switching (UIS) tested with less-than 1 Q_gd/Q_gs ratio that optimizes the switching characteristics. The Vishay / Siliconix SQJ Automotive MOSFETs offer very low R_DS(on) and operate within the -55°C to 175°C temperature range. These automotive-grade MOSFETs are available in a PowerPAK^® SO-8L package with single/dual configurations. Typical applications include automotive, engine management, motor drives and actuators, and battery management.