GP3T040A120H

SemiQ
148-GP3T040A120H
GP3T040A120H

Mfr.:

Description:
SiC MOSFETs Gen3 1200V, 40mohm SiC MOSFET, TO-247-4L

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 144

Stock:
144
Can Dispatch Immediately
On Order:
30
Factory Lead Time:
7
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,73 € 6,73 €
4,58 € 45,80 €
3,94 € 472,80 €
3,29 € 1 677,90 €

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4L
N-Channel
1 Channel
1.2 kV
140 A
52 mOhms
- 4.5 V, + 18 V
4 V
108 nC
- 55 C
+ 175 C
246 W
Enhancement
Brand: SemiQ
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Fall Time: 10 ns
Forward Transconductance - Min: 12 S
Packaging: Tube
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 8 ns
Series: GP3T
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: SiC MOSFET
Typical Turn-Off Delay Time: 31 ns
Typical Turn-On Delay Time: 17 ns
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

GEN3 1200V SiC MOSFET Discrete Devices

SEMiQ GEN3 1200V SiC MOSFET Discrete Devices are third-generation SiC MOSFETs and are 20% smaller than SEMiQ’s second-generation SiC MOSFETs. These devices have been developed to increase performance and cut switching losses in high-voltage applications.