Nexperia Newest Transistors
Nexperia BUK9Q N-Channel Trench MOSFET
09.09.2025
09.09.2025
Logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C.
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs
07.03.2025
07.03.2025
Normally off e-mode devices that deliver superior performance and very low on-state resistance.
Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs
07.03.2025
07.03.2025
40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).
Nexperia PXNx N-Channel Logic Level Trench MOSFETs
04.14.2025
04.14.2025
60V and 100V MOSFETS designed for high-efficiency power management in various applications.
Nexperia GANB8R0-040CBA Bi-Directional GaN FET
04.14.2025
04.14.2025
40V, 8.0mΩ bi-directional GaN HEMT housed in a compact 1.7mm x 1.7mm WLCSP package.
Nexperia Application-Specific Power MOSFETs
01.21.2025
01.21.2025
Combines proven MOSFET expertise with broad application understanding to create an expanding range.
Nexperia CCPAK ASFETs for Hotswap & Soft Start
01.08.2025
01.08.2025
Offers a reliable linear mode, enhanced SOA, and low RDS(on) in a single device.
Nexperia BC5xPAS-Q 1A Medium Power PNP Transistors
12.30.2024
12.30.2024
AEC-Q101 qualified PNP transistors in an ultra-thin DFN2020D-3 (SOT1061D) SMD plastic package.
Nexperia GANB4R8-040CBA Bi-Directional GaN FET
10.01.2024
10.01.2024
A 40V, 4.8mΩ bi-directional GaN High Electron Mobility-Transistor (HEMT) in a WLCSP package.
Nexperia BUK7J2R4-80M N-channel MOSFET
08.30.2024
08.30.2024
Based on the Trench 14 low ohmic split-gate technology and housed in an LFPAK56E package.
Nexperia PBSSxx50PAS/PBSSxx50PAS-Q Transistors
07.04.2024
07.04.2024
Provides low collector-emitter saturation voltage and high collector current capability.
Nexperia GANE3R9-150QBA Gallium Nitride (GaN) FET
07.02.2024
07.02.2024
A general purpose 150V, 3.9mΩ Gallium Nitride (GaN) FET in a VQFN package.
Nexperia NSF0x0120 N-Channel SiC MOSFETs
07.01.2024
07.01.2024
Offers superior RDS(on) temperature stability in a standard 7-pin TO-263 plastic package.
Nexperia PSMNxRx-80YSF NextPower N-Channel MOSFETs
06.24.2024
06.24.2024
80V, standard-level gate drive MOSFETs with a low Qrr for higher efficiency and lower spiking.
Nexperia NSF0x120L4A0 N-Channel MOSFETs
04.23.2024
04.23.2024
Silicon Carbide (SiC) based 1200V power MOSFETs in well-established 4-pin TO-247 plastic packages.
Nexperia PSMN047-100NSE N-Channel ASFET
04.04.2024
04.04.2024
The 100V, 53mΩ ASFET combines enhanced SOA in a compact 2mm x 2mm footprint.
Nexperia BSS138AK N-Channel Trench MOSFETs
04.04.2024
04.04.2024
AEC-Q101-qualified N-channel enhancement mode Field-Effect Transistors (FETs) in small SMD packages.
Nexperia 2N7002AK N-Channel Trench MOSFETs
04.04.2024
04.04.2024
Small AEC-Q101-qualified SMD plastic packages using Trench MOSFET technology.
Nexperia EMC-Optimized NextPowerS3 MOSFETs
02.28.2024
02.28.2024
Housed in space-saving LFPAK56 packages, ideal for brushless DC motor control applications.
Nexperia PSMN071-100NSE N-Channel ASFET
02.28.2024
02.28.2024
Designed for relay replacement, inrush management, and battery management applications.
Nexperia BUK7Y1R0-40N & BUK7Y3R1-80M N-Channel MOSFETs
02.23.2024
02.23.2024
Designed and qualified to meet AEC-Q101 requirements, delivering high performance and endurance.
Nexperia GAN039 CCPAK1212-Packaged Power GaN FETs
12.20.2023
12.20.2023
Copper-clip package technology with low inductances/switching losses and high reliability.
Nexperia 1200V SiC MOSFETs
11.30.2023
11.30.2023
Housed in 3-pin TO-247-3 and 4-pin TO-247-4 for through-hole PCB mounting.
Nexperia Small Signal Bipolar Transistor in DFN
11.02.2023
11.02.2023
Meets the growing demand for vehicle electronic functions.
Nexperia NGWx Trench Field-Stop IGBTs
08.09.2023
08.09.2023
Combine carrier-stored trench-gate and field-stop structures with third-generation technology.
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Nexperia BUK9Q N-Channel Trench MOSFET
09.09.2025
09.09.2025
Logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C.
Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs
07.03.2025
07.03.2025
40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs
07.03.2025
07.03.2025
Normally off e-mode devices that deliver superior performance and very low on-state resistance.
Renesas Electronics TP65H030G4Px 650V 30mΩ GaN FETs
07.01.2025
07.01.2025
These FETs come in TOLT, TO247, and TOLL packages and use the Gen IV Plus SuperGaN® platform.
ROHM Semiconductor Small Signal Dual Channel MOSFETs
06.30.2025
06.30.2025
Feature low on-resistance and fast switching, and are ideal for motor drives.
onsemi NVMFS4C03NWFET1G Single N-Channel Power MOSFET
06.23.2025
06.23.2025
Delivers excellent thermal performance and low RDS(on) in a compact 5mm x 6mm PowerFLAT package.
Littelfuse IXSJxN120R1 1,200 V SiC Power MOSFETs
06.23.2025
06.23.2025
High-performance devices designed for demanding power conversion applications.
ROHM Semiconductor Automotive 40A & 80A Power MOSFETs
06.16.2025
06.16.2025
Feature low on-resistance and are ideal for ADAS, automotive, and lighting applications.
PANJIT 50V Enhancement Mode MOSFETs
06.09.2025
06.09.2025
These MOSFETs have advanced Trench process technology and offer a low RDS(ON).
onsemi NVMFDx 100V Dual N-Channel Power MOSFETs
06.09.2025
06.09.2025
Features low RDS(on) values and fast switching characteristics in a space-saving DFN-8 package.
ROHM Semiconductor RV7E035AT P-Channel Small Signal MOSFET
06.04.2025
06.04.2025
Compact, high-performance MOSFET designed for low-voltage switching applications.
Infineon Technologies CoolMOS™ CM8 650V Power MOSFETs
06.03.2025
06.03.2025
Designed according to the Superjunction (SJ) principle to offer low switching and conduction losses.
Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs
06.03.2025
06.03.2025
Automotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.
Torex Semiconductor XPJ101N04N8R & XPJ102N09N8R N-Channel MOSFETs
06.03.2025
06.03.2025
Features low on-resistance, reducing energy losses and improving overall system efficiency.
onsemi NXH015F120M3F1PTG Silicon Carbide (SiC) Module
05.23.2025
05.23.2025
Features 15mΩ/1200V M3S SiC MOSFET full-bridge and a thermistor with Al2O3 DBC in an F1 package.
onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFET
05.22.2025
05.22.2025
Features a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.
STMicroelectronics STGWA30IH160DF2 1600V IH2 Series IGBT
05.22.2025
05.22.2025
Created by implementing an advanced proprietary trench gate field-stop structure.
Ampleon BLF981/BLF981S LDMOS Power Transistors
05.15.2025
05.15.2025
Designed for high-efficiency broadband applications across a frequency range from HF to 1400MHz.
Ampleon BLP981 LDMOS Power Transistor
05.15.2025
05.15.2025
170W power transistor engineered for broadband applications spanning from HF up to 1400MHz.
Wolfspeed YM Six-Pack Silicon Carbide Power Modules
05.14.2025
05.14.2025
Automotive-qualified modules that are designed for seamless design integration and durability.
onsemi NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET
05.13.2025
05.13.2025
Engineered to handle high currents, which is crucial for DC-DC power conversion stages.
APC-E Silicon Carbide (SiC) MOSFETs
05.06.2025
05.06.2025
Delivers high power, high frequency, and unmatched performance for demanding applications.
Infineon Technologies 700V CoolGaN™ G5 Power Transistors
05.02.2025
05.02.2025
Designed to operate at high frequencies with superior efficiency, enabling ultra-fast switching.
Infineon Technologies OptiMOS™ 6 200V Power MOSFETs
04.30.2025
04.30.2025
Offer excellent gate charge x RDS(on) product (FOM) and low on‑resistance RDS(on).
onsemi NVTFWS1D9N04XM MOSFET
04.28.2025
04.28.2025
Offers a low RDS(on) & capacitance in an AEC-Q101 qualified, µ8FL 3.3mm x 3.3mm small package.
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