4402 Transistors

Results: 20
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS Product Type Technology Mounting Style Package/Case Transistor Polarity
Vishay / Siliconix MOSFETs N-Channel 100 V (D-S) MOSFET SO-8, 9.3 mohm a. 10V, 10.3 mohm a. 4.5V 12 383In Stock
Min.: 1
Mult.: 1

MOSFETs Si SMD/SMT PowerPAK 1212-8S N-Channel
Vishay / Siliconix MOSFETs N-CHANNEL 40-V (D-S) MOSFET 2 834In Stock
Min.: 1
Mult.: 1
: 3 000

MOSFETs Si SMD/SMT PowerPAK-1212-8S N-Channel
Vishay Semiconductors SISD4402DN-T1-UE3
Vishay Semiconductors MOSFETs N-CHANNEL 40-V (D-S) MOSFET
Min.: 1
Mult.: 1
MOSFETs
MACOM GTRB204402FC/1-V1-R2
MACOM GaN FETs 400W, 48V, 1930-2020 MHz GaN-SiC HEMT Non-Stocked
Min.: 250
Mult.: 250
: 250

GaN FETs GaN-on-SiC
Panjit MOSFETs 30V N-Channel Enhancement Mode MOSFET Non-Stocked Lead-Time 36 Weeks
Min.: 5 000
Mult.: 5 000
: 5 000

MOSFETs Si
MACOM GTRB184402FC-V1-R0
MACOM GaN FETs 480W, 48V, 1805-1880 MHz GaN-SiC HEMT Non-Stocked
Min.: 50
Mult.: 50
: 50
GaN FETs GaN-on-SiC
MACOM GTRB224402FC-V1-R0
MACOM GaN FETs 400W, 48V, 2110-2200 MHz GaN-SiC HEMT Non-Stocked
Min.: 50
Mult.: 50
: 50

GaN FETs GaN-on-SiC
Nexperia MOSFETs PSMN8R5-60YS/SOT669/LFPAK 2 427In Stock
Min.: 1
Mult.: 1
: 1 500

MOSFETs Si SMD/SMT SOT-669-5 N-Channel
Panjit MOSFETs 30V N-Channel Enhancement Mode MOSFET Non-Stocked Lead-Time 52 Weeks
Min.: 5 000
Mult.: 5 000
: 5 000

MOSFETs Si
MACOM GTRB204402FC/1-V1-R0
MACOM GaN FETs 400W, 48V, 1930-2020 MHz GaN-SiC HEMT Non-Stocked
Min.: 50
Mult.: 50
: 50

GaN FETs GaN-on-SiC
MACOM GTRB224402FC-V1-R2
MACOM GaN FETs 400W, 48V, 2110-2200 MHz GaN-SiC HEMT Non-Stocked
Min.: 250
Mult.: 250
: 250

GaN FETs GaN-on-SiC
MACOM GTRB184402FC-V1-R2
MACOM GaN FETs 480W, 48V, 1805-1880 MHz GaN-SiC HEMT Non-Stocked
Min.: 250
Mult.: 250
: 250
GaN FETs GaN-on-SiC
Infineon Technologies RF Bipolar Transistors RF BIP TRANSISTOR 63 647In Stock
Min.: 1
Mult.: 1
: 3 000

RF Bipolar Transistors Si SMD/SMT SOT-323 NPN
Central Semiconductor 2N4402 TRE TIN/LEAD
Central Semiconductor Bipolar Transistors - BJT 40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch Non-Stocked Lead-Time 42 Weeks
Min.: 2 000
Mult.: 2 000
: 2 000

BJTs - Bipolar Transistors PNP
Central Semiconductor 2N4402 APM PBFREE
Central Semiconductor Bipolar Transistors - BJT 40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch Non-Stocked Lead-Time 14 Weeks
Min.: 2 000
Mult.: 2 000
: 2 000

BJTs - Bipolar Transistors PNP
Central Semiconductor Bipolar Transistors - BJT PNP 40Vcbo 40Vceo 5.0Vebo 600mA 625mW Non-Stocked Lead-Time 42 Weeks
Min.: 2 500
Mult.: 2 500

BJTs - Bipolar Transistors Si Through Hole TO-92-3 PNP
Central Semiconductor Bipolar Transistors - BJT PNP 40Vcbo 40Vceo 5.0Vebo 600mA 625mW Non-Stocked Lead-Time 14 Weeks
Min.: 2 500
Mult.: 2 500

BJTs - Bipolar Transistors Through Hole TO-92-3 PNP
Central Semiconductor 2N4402 APM TIN/LEAD
Central Semiconductor Bipolar Transistors - BJT 40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch Non-Stocked Lead-Time 42 Weeks
Min.: 2 000
Mult.: 2 000
: 2 000

BJTs - Bipolar Transistors PNP
Central Semiconductor 2N4402 TRE PBFREE
Central Semiconductor Bipolar Transistors - BJT 40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch Non-Stocked Lead-Time 14 Weeks
Min.: 2 000
Mult.: 2 000
: 2 000

BJTs - Bipolar Transistors PNP
Infineon Technologies MOSFETs MOSFET_)40V 60V)
5 000On Order
Min.: 1
Mult.: 1
: 5 000

MOSFETs Si SMD/SMT TSDSON-8-32 N-Channel