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TGS4306-FC

Name: Qorvo TGS4306-FC
Brand: Qorvo
SKU: 772-TGS4306-FC
Price: 23.77 EUR
Availability: OutOfStock

Mouser No:

772-TGS4306-FC

Mfr. No:

TGS4306-FC

Mfr.:

Qorvo

Description:

RF Switch ICs 77GHz SP4T

Datasheet:

TGS4306-FC Datasheet

ECAD Model:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	23,77 €	7 677,71 €
646	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	RF Switch ICs
RoHS:
Maximum Frequency:	77 GHz
Package/Case:	Die
Technology:	Si
Series:	TGS4306
Packaging:	Gel Pack
Brand:	Qorvo
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Product Type:	RF Switch ICs
Factory Pack Quantity:	323
Subcategory:	Wireless & RF Integrated Circuits
Part # Aliases:	1067656

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5-0810-13

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Datasheet

TGS4306-FC Datasheet

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CNHTS:: 8542319000
CAHTS:: 8542330000
USHTS:: 8542390090
JPHTS:: 8542330996
KRHTS:: 8532331000
MXHTS:: 8542330299
ECCN:: EAR99

TriQuint GaN Solutions

TriQuint leads the market in developing gallium nitride (GaN) products and processes. TriQuint's GaN technology supports RF requirements up to 40GHz with drain bias up to 48V. GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness. These qualities enable RF systems to use less electricity, operate with less input voltage and deliver greater RF output power while reducing amplifier size and part counts. TriQuint GaN technology enables a wide range of MMIC amplifiers, discrete transistors and switches for commercial and defense applications. TriQuint is redefining what is possible, helping customers reach further while bringing designs to market faster than ever before. TriQuint narrowband amplifiers provide higher power with smaller form factors compared to previous generations. TriQuint wideband amplifiers and discrete transistors deliver record-setting power and efficiency levels. TriQuint switches support next-generation radar, electronic warfare (EW) and instrumentation systems with greater efficiency in smaller packages or as die-level components.
Learn More

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.