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BFR 93AW H6327

Name: Infineon BFR 93AW H6327
Brand: Infineon Technologies
SKU: 726-BFR93AWH6327
Price: 0.26 EUR
Availability: InStock

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Mouser No:

726-BFR93AWH6327

Mfr. No:

BFR 93AW H6327

Mfr.:

Infineon Technologies

Description:

RF Bipolar Transistors RF BIP TRANSISTOR

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

BFR 93AW H6327 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies BFR 93AW H6327

In Stock: 36 667

Stock:: 36 667 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,267 €	0,27 €
	0,162 €	1,62 €
	0,128 €	12,80 €
	0,121 €	60,50 €
	0,116 €	116,00 €
Full Reel (Order in multiples of 3000)
	0,109 €	327,00 €
	0,107 €	642,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	RF Bipolar Transistors
RoHS:
Series:	BFR93
Transistor Type:	Bipolar
Technology:	Si
Transistor Polarity:	NPN
Operating Frequency:	2 GHz
DC Collector/Base Gain hFE Min:	70
Collector- Emitter Voltage VCEO Max:	12 V
Emitter- Base Voltage VEBO:	2 V
Continuous Collector Current:	90 mA
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package/Case:	SOT-323
Qualification:	AEC-Q100
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Maximum DC Collector Current:	90 mA
Pd - Power Dissipation:	300 mW
Product Type:	RF Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors
Part # Aliases:	SP000734402 BFR93AWH6327XT BFR93AWH6327XTSA1
Unit Weight:	60 mg

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Filter Document:

Datasheet

BFR 93AW H6327 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210075
JPHTS:: 8541290100
KRHTS:: 8541219000
MXHTS:: 85412999
ECCN:: EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

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