Infineon Technologies 1200V TRENCHSTOP IGBT7 H7 Discrete Transistors
Infineon Technologies 1200V TRENCHSTOP IGBT7 H7 Discrete Transistors are the 7th generation of 1200V TRENCHSTOP™ IGBTs, which are designed with micro-pattern trench technology. These discrete IGBTs offer a high level of controllability, low conduction losses, low switching losses, improved EMI performance, and humidity robustness under harsh environments. The IGBT7 H7 discrete transistors allow the selection of a low gate resistor (down to 5Ω) while maintaining excellent switching behavior. These transistors are used in fast EV charging, industrial heating and welding, and Uninterruptible Power Supplies (UPS) applications.
Features
- Excellent VCEsat behavior due to TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Low conduction losses
- Low EMI emissions
- High power density with up to 140A current rating
- Low switching losses
- Humidity robustness under harsh environments
Applications
- Fast EV charging
- Industrial heating and welding
- Uninterruptible Power Supplies (UPS)
- Photovoltaic energy systems
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