Qorvo TGA2830 & TGA2975 GaN Power Amplifiers
Qorvo TGA2830 & TGA2975 GaN Power Amplifiers operate from 2.7GHz to 3.5GHz and are designed using Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25). The TGA2830 and TGA2975 can operate under both pulse and CW conditions and are ideally suited for commercial and defense related radar applications. Both RF ports on these devices have integrated DC blocking capacitors and are matched to 50Ω.
The Qorvo TGA2830 and TGA2975 GaN Power Amplifiers are available in a 5mm x 5mm overmold Quad Flat No-Lead (QFN) package.
Features
- 2.7GHz to 3.5GHz frequency range
- Output power at saturation (PSAT) PIN = 18dBm
- 2830: >42.5dBm
- 2975: >41.0dBm
- Power Added Efficiency (PAE) PIN = 18dBm
- 2830: >54%
- 2975: >54%
- Small signal gain
- 2830: >30.5dB
- 2975: >31.0dB
- Return loss
- 2830: >11.0dB
- 2975: >9.0dB
- Bias
- 2830: VD = 20V to 32V, IDQ = 225mA
- 2975: VD = 28V, IDQ = 175mA
- Pulsed VD: PW = 100us, DC = 10%
- 5.0mm x 5.0mm x 1.45mm QFN24 package
Applications
- Commercial and military radar
Related Products
Qorvo GaN Power Amplifiers
Allow unique, cost-effective solutions across a variety of applications.
Block Diagram
Package Outline
View Results ( 4 ) Page
| Part Number | Datasheet | Gain | Operating Supply Current |
|---|---|---|---|
| TGA2975-SM |  |
31 dB | 175 mA |
| TGA2830-SM | |
30.5 dB | 225 mA |
| TGA2830-SMTR7 | |
30.5 dB | |
| TGA2975-SMTR7 | |
Published: 2015-09-28
| Updated: 2022-03-11